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Dimensioning and Comparison of a Novel Power Converter Topology by Empirical Semiconductor Models

Dimensioning and Comparison of a Novel Power Converter Topology by Empirical Semiconductor Models
Autor:

Christian Axtmann, Johannes Kolb, Michael Braun

Links:
Quelle:

4th IEEE Southern Power Electronics Conference (SPEC 2018)

Datum: 10.12. - 13.12.2018, Singapore

Abstract

A widely known problem is to compare different power converter topologies by means of semiconductor effort and thus cost. This is often additionally hindered by a limited amount of individual, existing semiconductors. This paper presents an approach in terms of semiconductor models and a design algorithm. In a first step, area-specific semiconductor models are derived by regression analysis of datasheet parameters of existing devices. This is done for both MOSFETs and IGBTs. In a second step, a design algorithm is presented and two power converter topologies for electric traction applications are compared.